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Title:
SEMICONDUCTOR LASER AND CARRIER INJECTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/056617
Kind Code:
A1
Abstract:
A semiconductor laser and a carrier injection method therefor. The method comprises: preparing a semiconductor laser epitaxial structure on a substrate, and obtaining an epitaxial structure wafer (S1); preparing a ridge-shaped structure of the semiconductor laser on the wafer (S2); preparing a dielectric film on the ridge-shaped structure (S3); etching the dielectric film on a ridge surface of the ridge-shaped structure to form a dielectric film which is distributed in a non-uniform shape along a longitudinal direction (S4); preparing an electrode on the dielectric film (S5); cleaving the wafer, and respectively preparing an anti-reflection film and a high-reflection film at a front end and a rear end of a cleaved surface (S6); and carrying out carrier injection from an anti-reflection film cavity surface to a high-reflection film cavity surface (S7). By controlling the shape of the dielectric film on the ridge surface, non-uniform injection of current along the longitudinal direction of the ridge is realized, and therefore, carrier non-uniform distribution caused by long cavity length and the reflectivity difference of the cavity surfaces at the two ends is offset, the distribution uniformity of gains of the semiconductor laser along a longitudinal direction under a working state is improved, and the light output power of the semiconductor laser is improved.

Inventors:
WANG JUN (CN)
ZHAO ZHIDE (CN)
TAN SHAOYANG (CN)
CHENG YANG (CN)
Application Number:
PCT/CN2019/111045
Publication Date:
April 01, 2021
Filing Date:
October 14, 2019
Export Citation:
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Assignee:
EVERBRIGHT INST OF SEMICONDUCTOR PHOTONICS CO LTD (CN)
International Classes:
H01S5/042; H01S5/06
Foreign References:
CN101938085A2011-01-05
CN107946901A2018-04-20
CN1574526A2005-02-02
JP2005302843A2005-10-27
CN109923743A2019-06-21
Attorney, Agent or Firm:
SUNSHINE INTELLECTUAL PROPERTY INTERNATIONAL CO., LTD. (CN)
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