Title:
SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
WIPO Patent Application WO/2013/005759
Kind Code:
A1
Abstract:
In order to provide a ridge-type semiconductor laser element that can inhibit inclination of the element upon executing junction-down joining and that has a good heat radiation characteristic, the semiconductor laser element is provided with: a substrate; a semiconductor section that is formed on the substrate and comprises a ridge on a face at the side opposite the substrate; an electrode formed on the ridge; insulation films formed on the semiconductor section at both sides of the ridge; and a pad electrode formed on the electrode. In this semiconductor laser element wherein the pad electrode side is the mounting face side, the pad electrode is formed extending above the insulation films, and spacer sections are formed between the semiconductor section and the pad electrode at portions away from the ridge.
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Inventors:
MASUI SHINGO (JP)
KAWATA YASUHIRO (JP)
FUJIMOTO HIDEYUKI (JP)
MICHIUE ATSUO (JP)
KAWATA YASUHIRO (JP)
FUJIMOTO HIDEYUKI (JP)
MICHIUE ATSUO (JP)
Application Number:
PCT/JP2012/067051
Publication Date:
January 10, 2013
Filing Date:
July 04, 2012
Export Citation:
Assignee:
NICHIA CORP (JP)
MASUI SHINGO (JP)
KAWATA YASUHIRO (JP)
FUJIMOTO HIDEYUKI (JP)
MICHIUE ATSUO (JP)
MASUI SHINGO (JP)
KAWATA YASUHIRO (JP)
FUJIMOTO HIDEYUKI (JP)
MICHIUE ATSUO (JP)
International Classes:
H01S5/22; H01S5/022
Domestic Patent References:
| WO2009034928A1 | 2009-03-19 |
Foreign References:
| JP2004140141A | 2004-05-13 |
Other References:
See also references of EP 2731212A4
Attorney, Agent or Firm:
SAMEJIMA, Mutsumi et al. (JP)
Mutsumi Sameshima (JP)
Mutsumi Sameshima (JP)
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Claims: