Title:
SEMICONDUCTOR LASER
Document Type and Number:
WIPO Patent Application WO/2020/230318
Kind Code:
A1
Abstract:
According to the present invention, a relationship between the waveguide-direction length L1 of a first distribution Bragg reflector region (132a), the waveguide-direction length L2 of a distribution feedback active region (131), the waveguide-direction length L3 of a second distribution Bragg reflector region (132b), and the position xps of a phase shift part (121a) satisfies the expressions, xps=L1+L2×α and L2(1-α)+L3>xps, where 0.5<α<1. The position xps is a position of the phase shifter part (121a) in the waveguide direction with an end portion on the first distribution Bragg reflector region (132a) side as an origin.
Inventors:
KANNO ERINA (JP)
TAKEDA KOJI (JP)
KAKITSUKA TAKAAKI (JP)
MATSUO SHINJI (JP)
TAKEDA KOJI (JP)
KAKITSUKA TAKAAKI (JP)
MATSUO SHINJI (JP)
Application Number:
PCT/JP2019/019490
Publication Date:
November 19, 2020
Filing Date:
May 16, 2019
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01S5/12
Foreign References:
| JP2019012769A | 2019-01-24 | |||
| JP2017216353A | 2017-12-07 | |||
| US20140269807A1 | 2014-09-18 |
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
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