SEMICONDUCTOR PHOTOCATHODE

WIPO Patent Application WO/2002/041349

A1

UV beams shone from a surface layer (5) side pass through the surface layer (5) and reach a light absorption layer (4). Beams reached the light absorption layer (4) are absorbed in the layer (4) to generate photoelectrons in the layer (4). Photoelectrons diffuse in the layer (4) to reach an interface between the light absorption layer (4) and the surface layer (5). Since an energy band is bent in the vicinity of the interface between the layers (4), (5), energy provided by photoelectrons grows over electron affinity on the layer (5) to easily emit photoelectrons to the outside. Since the layer (4) is formed of an Al¿0.3?Ga¿0.7?N layer having a Mg content concentration of at least 2x10?19¿ cm?-3¿ and up to 1x10?20¿ cm?-3¿, a solar-blind type semiconductor photocathode (1) having a high quantum efficiency is obtained.

JP2002245959	MULTIPHOTON EXCITATION TYPE POLARIZED ELECTRON BEAM GENERATOR
WO/2018/043029	ELECTRON MULTIPLIER PRODUCTION METHOD AND ELECTRON MULTIPLIER
JP5590485	A source of an optical switching electron, and an electron beam lithography system using it

KAN HIROFUMI (JP)
NIIGAKI MINORU (JP)
OHTA MASASHI (JP)
TAKAGI YASUFUMI (JP)
UCHIYAMA SHOICHI (JP)

PCT/JP2001/009989

May 23, 2002

November 15, 2001

Click for automatic bibliography generation  

HAMAMATSU PHOTONICS KK (JP)
KAN HIROFUMI (JP)
NIIGAKI MINORU (JP)
OHTA MASASHI (JP)
TAKAGI YASUFUMI (JP)
UCHIYAMA SHOICHI (JP)

H01J1/34; H01J29/38; H01J31/50; H01J40/06; H01J43/08; (IPC1-7): H01J1/34; H01J40/06

WO1997003453A2

1997-01-30

JP2000030604A	2000-01-28
JPH0896705A	1996-04-12
JPH08153462A	1996-06-11

Hasegawa, Yoshiki (Okura-honkan 6-12 Ginza 2-chome Chuo-ku, Tokyo, JP)

View/Download PDF      PDF Help

Previous Patent: CONTACT ARRANGEMENT FOR CURRENT-LIMITING PROTECTIVE CIRCUIT BREAKERS

Next Patent: METHOD OF FABRICATING CAPILLARY DISCHARGE PLASMA DISPLAY PANEL USING COMBINATION OF LASER AND WET ET...