Title:
SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2006/059368
Kind Code:
A1
Abstract:
A semiconductor storage device is provided with a charge storage layer (26), which is formed on a semiconductor substrate (10) and has a plurality of particles (16) as charge storage bodies in insulating films (12) and (24), and a gate electrode (30) formed on the charge storage layer (26). The particles (16) are composed of metal oxide or metal nitride.
Inventors:
SUGIZAKI TARO (JP)
Application Number:
PCT/JP2004/017776
Publication Date:
June 08, 2006
Filing Date:
November 30, 2004
Export Citation:
Assignee:
FUJITSU LTD (JP)
SUGIZAKI TARO (JP)
SUGIZAKI TARO (JP)
International Classes:
H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Foreign References:
| JP2003282748A | 2003-10-03 | |||
| JP2003347437A | 2003-12-05 | |||
| JP2004055969A | 2004-02-19 | |||
| JPH05129629A | 1993-05-25 | |||
| JP2000340682A | 2000-12-08 | |||
| JP2003133540A | 2003-05-09 |
Other References:
See also references of EP 1818978A4
Attorney, Agent or Firm:
Kitano, Yoshihito (Daikyo-cho Shinjuku-k, Tokyo 15, JP)
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