Title:
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREFOR, AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2024/036665
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductors, and relates to a semiconductor structure and a forming method therefor, and a memory. The semiconductor structure of the present disclosure comprises a substrate, a wordline structure, an electrically conductive contact structure and a buffer layer, wherein the substrate comprises an active region; the active region comprises a channel region, and a source region and a drain region, which are respectively distributed on two sides of the channel region; a wordline trench is provided in the channel region; the wordline structure is located in the wordline trench; the electrically conductive contact structure is connected to the top of the drain region; and the buffer layer is located between the electrically conductive contact structure and the wordline structure. The semiconductor structure of the present disclosure can reduce electrical leakage, thereby improving the reliability of a device and reducing the standby power consumption.
Inventors:
LIAO YU-CHENG (CN)
CHEN MUYU (CN)
CHEN MUYU (CN)
Application Number:
PCT/CN2022/115545
Publication Date:
February 22, 2024
Filing Date:
August 29, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L29/51
Foreign References:
| CN114068690A | 2022-02-18 | |||
| CN108110005A | 2018-06-01 | |||
| CN111063722A | 2020-04-24 | |||
| CN209312720U | 2019-08-27 | |||
| US10056528B1 | 2018-08-21 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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