Title:
SEMICONDUCTOR STRUCTURE MANUFACTURING METHOD, SEMICONDUCTOR STRUCTURE AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/130560
Kind Code:
A1
Abstract:
The present disclosure provides a semiconductor structure manufacturing method, a semiconductor structure and a memory. The semiconductor structure manufacturing method comprises: providing a substrate, an active region and a shallow trench isolation structure adjacent thereto being formed in the substrate; forming a contact hole in the substrate, the bottom of the contact hole exposing at least part of the active region and at least part of the shallow trench isolation structure; forming a conductive plug in the contact hole, the bottom of the conductive plug being electrically connected to the active region; forming a first isolation structure, the first isolation structure filling the contact hole and being in direct contact with the conductive plug, wherein the first isolation structure comprises a first laminated structure.
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Inventors:
LIU XIANG (CN)
Application Number:
PCT/CN2022/079662
Publication Date:
July 13, 2023
Filing Date:
March 08, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8242; H01L27/108
Foreign References:
| CN109994473A | 2019-07-09 | |||
| CN108206208A | 2018-06-26 | |||
| CN103779318A | 2014-05-07 | |||
| CN113851453A | 2021-12-28 | |||
| CN109003938A | 2018-12-14 | |||
| US9881865B1 | 2018-01-30 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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