Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/168742
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method therefor, used for solving the technical problem of low turn-on current of a semiconductor structure. The semiconductor structure comprises a substrate, a barrier layer covering the substrate, a first adjustment layer, and a first contact structure; the substrate comprises a plurality of active areas spaced apart, the active area comprises first contact areas, the barrier layer is provided with a plurality of first contact holes spaced apart, and each first contact hole runs through the barrier layer and extends into the substrate to expose one first contact area; the first adjustment layer is located on side walls of the first contact holes; the first contact structure fills the area defined by the first adjustment layer and the first contact areas. A layer of atoms in the first contact structure in contact with the first adjustment layer needs to adapt to the first adjustment layer, thus generating tensile stress or compressive stress, and the tensile stress or compressive stress causes the electron mobility of the first contact structure to be improved, so as to improve the turn-on current of the first contact structure, thereby improving the performance of the semiconductor structure.
Inventors:
LI SONGYU (CN)
Application Number:
PCT/CN2022/081555
Publication Date:
September 14, 2023
Filing Date:
March 17, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/768; H01L23/48; H01L23/528; H01L23/532
Domestic Patent References:
| WO2022042022A1 | 2022-03-03 |
Foreign References:
| CN113690187A | 2021-11-23 | |||
| CN113035872A | 2021-06-25 | |||
| CN111192876A | 2020-05-22 | |||
| CN105448919A | 2016-03-30 | |||
| US20210074639A1 | 2021-03-11 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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