Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/021180
Kind Code:
A1
Abstract:
The embodiments of the present disclosure relate to the field of semiconductors. Provided are a manufacturing method for a semiconductor structure, and the semiconductor structure. The semiconductor structure comprises a peripheral region and an array region. The manufacturing method comprises: providing a substrate, in which an active layer is provided in the peripheral region; forming a word line trench in the substrate of the array region; arranging a word line in the word line trench, the word line comprising a first word line conductive layer and a second word line conductive layer which are arranged in a stacked manner, the top of the first word line conductive layer being provided with a protrusion that protrudes in a direction from the first word line conductive layer to the second word line conductive layer; forming an isolation layer that covers the substrate; and forming a first through hole and a second through hole, which penetrate the isolation layer, wherein the active layer is exposed from the first through hole, and the protrusion is exposed from the second through hole. According to the embodiments of the present disclosure, at least the production process can be simplified.
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Inventors:
MOON JOONSUK (CN)
ZHANG SI (CN)
CHIN JO-LAN (CN)
JANG SEMYEONG (CN)
LI YANLONG (CN)
ZHANG SI (CN)
CHIN JO-LAN (CN)
JANG SEMYEONG (CN)
LI YANLONG (CN)
Application Number:
PCT/CN2022/112183
Publication Date:
February 01, 2024
Filing Date:
August 12, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8242; H01L27/108
Foreign References:
| CN113035870A | 2021-06-25 | |||
| CN112670269A | 2021-04-16 | |||
| CN113539972A | 2021-10-22 | |||
| CN108063140A | 2018-05-22 | |||
| US20210358920A1 | 2021-11-18 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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