Title:
SEMICONDUCTOR STRUCTURE MANUFACTURING METHOD AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/040698
Kind Code:
A1
Abstract:
Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure manufacturing method and a semiconductor structure. The semiconductor structure manufacturing method comprises: providing a substrate, the substrate comprising a PMOS region; forming a channel layer, the channel layer being located on the surface of the substrate in the PMOS region; forming a gate structure and a protective layer, the gate structure being located on the surface of the channel layer, and the protective layer covering the surface of the gate structure and part of the surface of the channel layer; and after the gate structure and the protective layer are formed, passivating the surface of the channel layer by using a hydrogen ion casting process. Therefore, electric leakage of the semiconductor structure can be reduced.
Inventors:
HUANG WENHUA (CN)
Application Number:
PCT/CN2022/124144
Publication Date:
February 29, 2024
Filing Date:
October 09, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/336; H01L29/78
Foreign References:
| CN1196573A | 1998-10-21 | |||
| CN101183683A | 2008-05-21 | |||
| CN110993607A | 2020-04-10 | |||
| JPS63299277A | 1988-12-06 | |||
| CN112490180A | 2021-03-12 | |||
| JPH05102471A | 1993-04-23 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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