Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2022/037243
Kind Code:
A1
Abstract:
A semiconductor structure and a method for forming same. The method for forming the semiconductor structure comprises: providing a substrate; forming a dielectric layer having a first trench on the substrate; forming a first filling layer that partially fills the first trench; forming a first mask layer having a first opening on the dielectric layer, the first opening exposing the first filling layer and a portion of the dielectric layer; by taking the first mask layer as a mask, etching the dielectric layer to form a second trench; removing the first filling layer; and forming a conductive material in the first trench and the second trench. In embodiments of the present application, the method for firstly forming the first trench, partially filling the first filling layer in the first trench and removing the first filling layer after forming the second trench can cause the height of the first filling layer to be matched with the arrangement density of the semiconductor structure.
Inventors:
YAN XUN (CN)
Application Number:
PCT/CN2021/101436
Publication Date:
February 24, 2022
Filing Date:
June 22, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/4763
Foreign References:
| US20030054629A1 | 2003-03-20 | |||
| US20050106856A1 | 2005-05-19 | |||
| JP2002093901A | 2002-03-29 | |||
| CN1753162A | 2006-03-29 | |||
| CN102376597A | 2012-03-14 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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