Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2023/231092
Kind Code:
A1
Abstract:
Provided in the embodiments of the present disclosure are a semiconductor structure and a method for forming same. The semiconductor structure comprises a storage chip, a control chip and a capacitor structure. The storage chip comprises an array area; the control chip comprises a peripheral area; the control chip is in face-to-face bonding connection with the storage chip; and the capacitor structure is located on the surface of the side of the storage chip away from a bonding surface, and a capacitor in the capacitor structure is electrically connected to a corresponding transistor in the array area.
Inventors:
CAO KANYU (CN)
LEE TZUNG-HAN (CN)
LIU CHIH-CHENG (CN)
YANG HUAIWEI (CN)
LEE TZUNG-HAN (CN)
LIU CHIH-CHENG (CN)
YANG HUAIWEI (CN)
Application Number:
PCT/CN2022/101005
Publication Date:
December 07, 2023
Filing Date:
June 24, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108
Foreign References:
| CN112951828A | 2021-06-11 | |||
| CN113078116A | 2021-07-06 | |||
| CN112071841A | 2020-12-11 | |||
| CN112951829A | 2021-06-11 | |||
| US20210305230A1 | 2021-09-30 | |||
| CN114530419A | 2022-05-24 | |||
| US20120205733A1 | 2012-08-16 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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