SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2023/029401

A1

The present application relates to the technical field of semiconductors. Provided are a semiconductor structure and a method for manufacturing same, which aim to solve the technical problem of the poor performance of a semiconductor structure. The manufacturing method comprises: providing a substrate, wherein the substrate comprises a first semiconductor material layer, a silicon-germanium compound layer, and a second semiconductor material layer, which are stacked in sequence; forming, in the substrate, first grooves extending in a first direction and second grooves extending in a second direction, wherein the first grooves and the second grooves divide the substrate into a plurality of columnar structures arranged at intervals; doping the columnar structures, wherein the silicon-germanium compound layer forms a channel region; and forming a dielectric layer on an outer peripheral surface of each columnar structure, and forming a gate on an outer peripheral surface of the dielectric layer, wherein the gate is opposite at least part of the channel region. By using the silicon-germanium compound layer to form the channel region, the electron mobility of the channel region can be improved, the short-channel effect can be alleviated, and therefore the performance of the semiconductor structure can be improved.

SHAO GUANGSU (CN)
YUAN PAN (CN)
WU MINMIN (CN)

PCT/CN2022/077803

March 09, 2023

February 25, 2022

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CHANGXIN MEMORY TECH INC (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)

H01L29/786; H01L21/28

CN104900651A	2015-09-09
US20090148991A1	2009-06-11
US20120052640A1	2012-03-01

LEADER PATENT & TRADEMARK FIRM (CN)

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