Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/205741
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a method for manufacturing a semiconductor structure. The semiconductor structure comprises: a substrate; a first transistor, the first transistor being located on the substrate; a second transistor, the second transistor being located above the first transistor; and a gate structure, the gate structure comprising a first gate layer and a second gate layer that are connected, the first gate layer being disposed surrounding the first transistor, and the second gate layer being disposed surrounding the second transistor; the direction of extension of the first transistor and the direction of extension of the second transistor are both perpendicular to the substrate. The first transistor and the second transistor are stacked in the vertical direction, thus increasing the length of a conductive channel of the semiconductor structure. Meanwhile, the area occupied by the semiconductor structure is reduced, and therefore, the performance of the semiconductor structure is improved.
Inventors:
ZHANG KUI (CN)
YING ZHAN (CN)
YING ZHAN (CN)
Application Number:
PCT/CN2021/112900
Publication Date:
October 06, 2022
Filing Date:
August 17, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8238; H01L27/092
Foreign References:
| CN105895635A | 2016-08-24 | |||
| US20200212226A1 | 2020-07-02 | |||
| US20200335581A1 | 2020-10-22 | |||
| CN113078155A | 2021-07-06 | |||
| CN113078154A | 2021-07-06 | |||
| CN109196584A | 2019-01-11 |
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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