Title:
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/045296
Kind Code:
A1
Abstract:
Provided in the present disclosure are a semiconductor structure and a preparation method therefor. The preparation method comprises: providing a substrate, wherein the substrate comprises a shallow trench isolation structure and an active region, which is defined by the shallow trench isolation structure; forming a channel layer on the surface of the active region; removing the channel layer in a junction area of the shallow trench isolation structure and the active region, so as to expose part of the active region; and forming an insulating layer on the surface of the exposed active region. By means of the preparation method for a semiconductor structure provided in the embodiments of the present disclosure, after a channel layer is formed, an edge part, which is relatively thin, of the channel layer is removed and then filled with an insulating layer, so as to form a high-quality channel layer with a uniform thickness, such that the performance of a semiconductor structure is greatly improved, and an application range of a semiconductor structure, in which a channel is made of a silicon germanium material, is expanded.
Inventors:
WANG TONGHUI (CN)
Application Number:
PCT/CN2022/127029
Publication Date:
March 07, 2024
Filing Date:
October 24, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/335
Foreign References:
| US20120282763A1 | 2012-11-08 | |||
| US20090181507A1 | 2009-07-16 | |||
| CN103594374A | 2014-02-19 | |||
| US20140339638A1 | 2014-11-20 | |||
| CN114639676A | 2022-06-17 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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