Title:
SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM
Document Type and Number:
WIPO Patent Application WO/2022/202402
Kind Code:
A1
Abstract:
The present invention aims to provide: a production method for a semiconductor substrate that has excellent pattern rectangularity; and a composition for forming a resist underlayer film. The semiconductor substrate production method comprises: a step in which a resist underlayer film-forming composition is directly or indirectly applied to the substrate; a step in which a metal-containing resist film is formed on the resist underlayer film formed in the resist underlayer film-forming composition coating step; a step in which the metal-containing resist film is exposed; a step in which a developing solution is prepared; and a step in which an exposed section of the exposed metal-containing resist film is dissolved by the developing solution to form a resist pattern.
Inventors:
MARUYAMA KEN (JP)
ABE TAKAYOSHI (JP)
SAKAI KAZUNORI (JP)
ABE TAKAYOSHI (JP)
SAKAI KAZUNORI (JP)
Application Number:
PCT/JP2022/010895
Publication Date:
September 29, 2022
Filing Date:
March 11, 2022
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
C07C25/02; C07C271/02; C07C309/06; C07C309/19; C07C381/12; G03F7/004; G03F7/11; G03F7/20; G03F7/32
Foreign References:
| JP2020056889A | 2020-04-09 | |||
| JP2018025823A | 2018-02-15 | |||
| JP2017116923A | 2017-06-29 | |||
| JP2019500490A | 2019-01-10 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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