Title:
SEMICONDUCTOR WAFER HAVING EPITAXIAL LAYER
Document Type and Number:
WIPO Patent Application WO/2019/137728
Kind Code:
A1
Abstract:
A semiconductor wafer made of monocrystalline silicon, comprising a substrate wafer made of monocrystalline silicon and a layer which is made of monocrystalline silicon and disposed on a front side of the substrate wafer, wherein the substrate wafer has a crystal orientation, characterised in that a front-side average ZDD of the semiconductor wafer, when the surface of the epitaxial layer is divided into 16 sectors and a 1 mm edge is excluded, is no less than -30 nm/mm2 and no more than 0 nm/mm2, and the ESFQRmax of the semiconductor wafer with a 1 mm edge exclusion and 72 sectors each having a length of 30 mm is 10 nm at most.
Inventors:
WERNER NORBERT (DE)
HAGER CHRISTIAN (DE)
HAGER CHRISTIAN (DE)
Application Number:
PCT/EP2018/084620
Publication Date:
July 18, 2019
Filing Date:
December 12, 2018
Export Citation:
Assignee:
SILTRONIC AG (DE)
International Classes:
H01L21/20; C30B29/06
Foreign References:
| DE102015225663A1 | 2017-06-22 | |||
| DE102016210203B3 | 2017-08-31 | |||
| US5355831A | 1994-10-18 | |||
| US20070227441A1 | 2007-10-04 | |||
| EP0857542A1 | 1998-08-12 |
Attorney, Agent or Firm:
STAUDACHER, Wolfgang (DE)
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