SENSE AMPLIFIER, MEMORY DEVICE, AND CONTROL METHOD FOR SENSE AMPLIFIER

WIPO Patent Application WO/2022/032967

A1

A sense amplifier, a memory device, and a control method for the sense amplifier, relating to the technical field of semiconductor memory devices. The sense amplifier (1) comprises an amplification module (11) and a control module (12) which is electrically connected to the amplification module (11). When data in a storage unit on a first bit line is read, during the offset compensation stage of the sense amplifier (1), the control module (12) configures the amplification module (11) to be a first inverter which comprises a first diode structure and a first current mirror structure and is input/output connected. When data in a storage unit on a second bit line is read, during the offset compensation stage of the sense amplifier (1), the control module (12) configures the amplification module (11) to be a second inverter which comprises a second diode structure and a second current mirror structure and is input/output connected. The offset compensation of the sense amplifier can be achieved, thereby improving the performance of a semiconductor memory device.

LU WENJUAN (CN)
GE JUNLIN (CN)
HE JUN (CN)
YING ZHAN (CN)
LI XIN (CN)
CAO KANYU (CN)
PENG CHUNYU (CN)
LIN ZHITING (CN)
WU XIULONG (CN)
CHEN JUNNING (CN)

PCT/CN2020/139627

February 17, 2022

December 25, 2020

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UNIV ANHUI (CN)
CHANGXIN MEMORY TECH INC (CN)

G11C7/08

CN111863055A	2020-10-30
CN109686387A	2019-04-26
CN109448768A	2019-03-08
CN108231100A	2018-06-29
CN102831921A	2012-12-19
US20150008841A1	2015-01-08
US20150194209A1	2015-07-09

BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)

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