TECHNICAL FIELD

The present invention is related to a sensor for generating signal related to light it exposed to, comprising a first unit having a first substrate, said first substrate being made of semiconductor material and said semiconductor material being configured to react to exposure of light having a first predetermined energy level, resulting in generation of a first current.

PRIOR ART

The sensor mechanism comprises an active layer affected by the light between anode and cathode. For the sensor, the object is to receive electrical signal through positive and negative in the determined frequencies/events for the active layer. The received signal shall be dynamic, rapid, sensitive, clear, stable and continuously repeatable.

The sensors can be used in any type of electronic circuits. The electronic circuits are used in application areas like automotive, medical devices, radar, night glasses and space.

The active layer, existing in the sensor, is arranged according to the application area used (as needed). In order to increase the sensitivity of the sensors, methods are applied which increase the success of the active layer.

In the optical sensors, the active layers are stacked one above the other and the sensitivity is guided. However, in this case, the number of layers exposed to light is one or a few, and this limits the properties like sensitivity. This arrangement is also used in solar cells.

BRIEF DESCRIPTION OF THE INVENTION

The object of the present invention is to provide a sensor increased having sensitivity and adjustable sampling frequency.

Another object of the invention is to provide a sensor capable of measuring properties of lights having different energy levels. In order to achieve above mentioned object and other object to be deducted from the specification, the present invention relates to a sensor for generating signal related to light it exposed to, comprising a first unit having a first substrate, said first substrate being made of semiconductor material and said semiconductor material being configured to react to exposure of light having a first predetermined energy level, resulting in generation of a first current, said first unit has a second substrate arranged on the first substrate in a shifted manner to define a first junction region therebetween; said second substrate is made of semiconductor material and said semiconductor material being configured to react to exposure of light having a second predetermined energy level, resulting in generation of a second current, the sensor further comprises a first measuring means connected to the first substrate adapted to measure current thereon, and a second measuring means connected to the second substrate adapted to measure current thereon, a third substrate arranged under the second substrate in a shifted manner to define a second junction region therebetween, and a third measuring means connected to third substrate and adapted to measure current thereon, and a dielectric region is provided between the first substrate and the third substrate.

In a probable embodiment of the invention, second predetermined energy level is different than the first predetermined energy level.

In another probable embodiment of the invention, said first unit further comprises a fourth substrate arranged next to or under or on the third substrate without contacting the second doped substrate and defining a third junction region therebetween.

In another probable embodiment of the invention, said first unit further comprises a fourth measuring means connected to fourth substrate and adapted to measure current thereon.

In another probable embodiment of the invention, said first unit further comprises a fifth substrate arranged next to or under or on the first substrate without contacting the second or fourth doped substrate and defining a fourth junction region therebetween.

In another probable embodiment of the invention, said first unit further comprises a fifth measuring means connected to fifth substrate and adapted to measure current thereon.

In another probable embodiment of the invention, wherein it comprises a second unit having similar structure with the first unit and connected to the fourth or fifth substrate of the first unit via one of its substrates in a manner to define a junction region therebetween. In another probable embodiment of the invention, the first unit and said second units are arrayed electrically serial or parallel with respect to each other.

In another probable embodiment of the invention, said first unit connected to a power source providing a current flow through the units.

In another probable embodiment of the invention, one of the substrates has different doping rate or made of different material than the other.

In another probable embodiment of the invention, rate between volume of one substrate and volume of junction region associated therewith is higher than 250.

In another probable embodiment of the invention, wherein each substrate is in prismatic form with at least one flat face to allow formation of the junction region with an adjacent doped substrate.

In another probable embodiment of the invention, it comprises a control unit connected to measuring means and adapted to generate signals depending on the current value received from measuring means.

In another probable embodiment of the invention wherein it comprises at least a first line having plurality of units being interconnected electrically serial or parallel to each other and at least a second line having similar structure with said first line, the first line and said second line are interconnected electrically serial or parallel.

In another probable embodiment of the invention, it further comprises a third line, said first line, said second line, and said third line having a first end and a second end, and first line, second line and the third line are electrically parallel to each other;

it further comprises a first switch element connected to first end of the first line separating the connection between the first line with the other lines when it’s on open state, a second switch element connected to second end of the first line separating the connection between the first line with the other lines when it’s on open state, a third switch element connected to first end of the second line separating the connection between the second line with the other lines when it’s on open state, a fourth switch element connected to second end of the second line separating the connection between the second line with the other lines when it’s on open state, a fifth switch element connected to first end of the third line separating the connection between the third line with the other lines when it’s on open state, and a sixth switch element connected to second end of the third line separating the connection between the third line with the other lines when it’s on open state;

it further comprises a first diode (41 1 ) arranged between first end of first line and second end of the second line adapted to allow current to flow through a first direction, and a second diode arranged between second end of the second line and the first end of the third line;

said control unit is configured to control states of switch elements in such way that lines are interconnected in y-connection or in delta-connection.

In another probable embodiment of the invention, said switch elements are made of semiconductor materials.

In another probable embodiment of the invention, first switch element, second switch element, third switch element, fourth switch element, fifth switch element, sixth switch element, first diode, second diode, first line, second line and third line are formed in a single chip.

In another probable embodiment of the invention, it comprises plurality of optical filters arranged on plurality of the substrates in such way that it at least partially covers at least a face exposed to light of the substrate it arranged on, said control unit is configured to control the working state of said optical filters.

In another probable embodiment of the invention, it comprises a second dielectric region arranged between fifth substrate and the fourth substrate.

In another probable embodiment of the invention, said control unit further configured to control the voltage or current level of energy source provided to units.

BRIEF DESCRIPTION OF THE FIGURES

Exemplary embodiments of the invention are depicted in the drawings and will be explained in more detail in the description below.

Fig. 1 is a drawing illustrating top view of the sensor and a detailed view of a unit located in the sensor in an exemplary embodiment.

Fig. 2 is a drawing illustrating a sensing unit in an exemplary embodiment of the sensor. Fig. 3 is a drawing illustrating detailed view of a sensing unit in an exemplary embodiment of the sensor.

Fig. 4 is a drawing illustrating a line in an exemplary embodiment of the sensor.

Fig. 5 is a drawing illustrating the resemblance of a line and a transistor in an exemplary embodiment of the sensor.

Fig. 6 is a drawing illustrating a sensing unit in an exemplary embodiment of the sensor.

Fig. 7 is a drawing illustrating a section of a line in an exemplary embodiment of the sensor. Fig. 8 is a drawing illustrating a sensing unit in an exemplary embodiment of the sensor.

Fig. 9 is a drawing illustrating a section of a line in an exemplary embodiment of the sensor. Fig. 10 is a drawing illustrating a section of a line in an exemplary embodiment of the sensor.

Fig. 1 1 is a drawing illustrating a sensing unit in an exemplary embodiment of the sensor.

Fig. 12 is a drawing illustrating a section of a line in an exemplary embodiment of the sensor.

Fig. 13 is a drawing illustrating a sensing unit and its connections with measuring means in an exemplary embodiment of the sensor.

Fig. 14 is a drawing illustrating a section of a line in an exemplary embodiment of the sensor. Fig. 15 is a drawing illustrating a section of a line and its connections with optical filters in an exemplary embodiment of the sensor.

Fig. 16 is a block diagram illustrating the sensor and its connections with a control unit in an exemplary embodiment.

THE DETAILED DESCRIPTION OF THE INVENTION

The embodiments herein and the various features and advantageous details thereof are explained more fully with reference to the non-limiting embodiments that are illustrated in the accompanying drawings and detailed in the following description. Descriptions of well-known components and processing techniques are omitted so as not to unnecessarily obscure the embodiments herein. The examples used herein are intended merely to facilitate an understanding of ways in which the embodiments herein may be practiced and to further enable those of skill in the art to practice the embodiments herein. Accordingly, the examples should not be construed as limiting the scope of the embodiments herein.

Subject matter sensor (10) referring to fig. 1 essentially comprises plurality of lines each made of plurality substrates (1 10) arranged at top of each other in a shifted manner to form a stepped configuration resembling stairs going upwards and downwards and repeating this configuration starting from a first terminal (181 ) and a second terminal (182). Referring to figure 1 present invention is a sensor (10) and essentially comprises at least a unit for receiving light having plurality of substrates (1 10); said substrates (1 10) are in prismatic form having a top face (141 ), a bottom face (143) and side faces (142); said substrates (1 10) are arranged on top of each other and under each other in a shifted manner to define a stair like configuration going upwards then going downwards so that each substrate (1 10) have its top side at least partially exposed to light, even if they are connected to an adjacent substrate’s (1 10) bottom face (143). Said substrates (1 10) are made of doped semiconductor materials and said semiconductor materials are configured to react to exposure of light having predetermined energy level. This reaction causes current flow through the unit. At least one substrate (1 10) is made of different semiconductor material or doped at different rates than the others allowing it to react to a light with different energy level. Those energy levels may be defined by the wavelength or intensity. A junction region (130) is formed between each substrate (1 10) that is interconnecting to each other. Said regions allow electron transition between substrates (1 10) caused by the light. Pluralities of measuring means (160) are connected to substrates (1 10) or measuring current flowing through each one.

In a probable embodiment referring to figure 6 the sensor (10), comprises a first unit (101 ) having a first substrate (1 1 1 ), a second substrate arranged on said first substrate (1 1 1 ) in a shifted manner defining a first junction region (131 ) between the first substrate (1 1 1 ) and the second substrate, i.e., bottom face (143) of said second substrate is connected to top face (141 ) of the first substrate (1 1 1 ). Said first junction region (131 ) is covering top face (141 ) of the first substrate (1 1 1 ) and bottom face (143) of the second substrate only partially and thus making the first substrate (1 1 1 ) and the second substrate resemble a stair configuration having two steps.

Substrates (1 10) may be made of Bismuth Telluride (BiTe) or Silicon-germanium (SiGe). More particularly but not necessarily said substrates (1 10) may be made of AllnP2 GalnP2, GalAs, AIGalAs, GaAs, GaAs, Bi2Te3.

The sensors (10) in prior art comprises a bottom substrate (1 10) and a top substrate (1 10) placed on top of said bottom substrate (1 10) defining a junction region (130) between them. Top substrate’s (1 10) bottom face (143) is completely covered with the bottom face (143) of the top substrate (1 10). Increasing the volume of top face (141 ) increases the volume of junction region (130) thus increasing the electrical resistance between them. Having larger junction region (130) and larger electrical resistance makes transition of electrons through junction region (130) slower proportionally to the area and resistance. Thus decreasing sensitivity and increasing reaction time of said sensor (10). This stepped configuration allows forming substrates (1 10) in varying volumes while being able to select the volume or area of junction region (130). Thereby increasing volume of substrates (1 10), while keeping junction region (130) in a predetermined volume, increases the reaction time of the sensor (10) and increases the sensitivity.

Preferably the ratio of the volume of a substrate (1 10) and volume of a region associated with that region is higher than 250.

A third substrate (1 13) is arranged under the second substrate (1 12) in a shifted manner defining a second junction region (132) between them. A first dielectric region (151 ) is formed between the first substrate (1 1 1 ) and the third substrate (1 13). A fourth substrate (1 14) is arranged under the first substrate (1 1 1 ) in a shifted manner to define a third junction region (133). At least one of the substrates (1 10) is configured to react to a light having different energy level than the others. A first measuring means (161 ) is connected to first substrate measuring the current passing through first substrate (1 1 1 ). A second measuring means (162) is connected to the second substrate (1 12), a third measuring means (163) connected to the third substrate (1 13) and a fourth measuring means is connected to the fourth substrate (1 14) to measure the currents flowing through the substrates (1 10) they are connected to. Measuring means (160) may be a multimeter preferably capable of measuring current in microampere level.

The sensor (10) in this embodiment further comprises a second substrate (1 12); said second substrate (1 12) is connected to the first substrate (1 1 1 ). Said second substrate (1 12) has similar structure with the first substrate (1 1 1 ) and it is connected to bottom face (143) of first unit’s third substrate (1 13) via one of its substrates (1 10). The sensor (10) may comprise plurality of units one of which is connected to second unit (102) and others are successively interconnected following it, forming a repetitive stairs pattern which is going upwards and downwards within each unit. First unit and second unit (102) or first unit, second unit (102) and the plurality of units define a first line (191 ). A power source is connected to first unit or to first line (191 ) providing selectable current or voltage thereto. Said first line (191 ) is arranged on a dielectric layer and said dielectric layer is arranged on a base layer. Said base layer may be made of Borosilicate or Silicium.

Applying voltage or current to units or lines decreases the threshold for the minimum level of energy that needs to be applied to receive a reaction from the substrates (1 10). This increases the intensity of the sensor (10), thus allowing to measure lights having significantly low energy level. Table 1 shows measurements conducted under light and in dark room on the sensor (10) having a first line (191 ) having BiTe substrates (1 10) on a Borosilicate base plate (300). Voltage is gradually applied from a first terminal (181 ) to line (190) and current received at the second terminal (182) is measured. A third terminal (183) is attached to one of the substrates (1 10). Said third terminal (183) feeds voltage to substrate (1 10) and functions as a gate terminal enabling current flow from first terminal (181 ) to second terminal (182) or vice versa. As it seen on the table, when the voltage on the first terminal (181 ) is increased gradually current received from the sensor (10) is also increased more than the voltage increment rate. Voltage increment lowers the reacting threshold of the sensor (10). Table 1 shows measurements conducted under light and in dark room on the sensor (10) having a first line (191 ) having BiTe substrates (1 10) on a Silicium base plate (300).

Third terminal’s (183) position may be set according to the light to be measured. Placing third terminal (183) closer to second terminal (182) or closer to first terminal (181 ) alters the reaction threshold of the sensor (10). Third terminal (183) may have voltage of as low as 1 .5mV.

Substrates (1 10) in first line (191 ) may be configured to react to lights having wavelengths within a predetermined bandwidth. The sensor (10) may comprise plurality of lines (190); each line (190) may comprise substrates (1 10) that are configured to react to lights having wavelengths within different predetermined bandwidths. This provides a broader light sensing range.

A control unit (400) is configured to control the current or voltage of the power source that is being fed to the first line (191 ). Said control unit (400) may be semiconductor based processing means, e.g. EEPROM, FPGA.

In a possible embodiment, sensor (10) may comprise multiple optical filters (200). Said optical filters (200) are adapted to switch between on and of states or different states of blocking predetermined wavelengths or predetermined polarizations. Said filters may be connected to said control unit (400), and the control unit (400) may be configured to control said filters. Each optical filter (200) may be arranged on at least one of the substrates (1 10). Preferably, each optical filter (200) is arranged on each substrate (1 10). Optical filters (200) may be arranged to at least partially cover top face (141 ) of at least one of the substrates (1 10). Alternatively, optical filters (200) may be arranged to cover side faces (142) of substrates (1 10) as well. Each filter may be individually controlled by the control unit (400).

In a probable embodiment according to figure 16 subject of the invention comprises the first line (191 ), a second line (192) and a third line (193). The first line (191 ), said second line (192) and said third lane are interconnected electrically parallel to each other. Each lines (190) having a first end and a second end. The parallelism is provided by connecting first ends to each other and second ends to each other via conductors. A first switch element (401 ) is connected to first end of the first line (191 ) separating the connection of the first line (191 ) from other lines. Said first switch element (401 ) is configured to switch between an open state and a closed state, said open state being the state separating the connection and said closed state being providing the connection between the first line (191 ) and the other lines (190). A second switch element (402) is connected to second end of the first line (191 ); said second switch element (402) is being similar to first switch element (401 ). A third switch element (403) is connected to first end of second line (192); said second switch element (402) is being similar to first switch element (401 ). A fourth switch element (404) is connected to second end of the second line (192); said third switch element (403) being similar to first switch element (401 ). A fifth switch element (405) is connected to first end of the third line (193); said fifth switch element (405) being similar to first switch element (401 ). A sixth switch element (406) connected to second line (192) of the third line (193); said sixth switch element (406) being similar to first switch element (401 ). A first diode (41 1 ) is connected between second end of the first line (191 ) and first end of the second line (192), allowing current to flow only from second end of the first line (191 ) to first end of the second line (192). A second diode (412) is connected between second end of the second line (192) and first line (191 ) of the third line (193), allowing current to flow only from second end of the second line (192) to first end of the third line (193). Power source is also connected to first ends of the parallel lines (190) and second ends of the parallel lines (190) (or a ground connection is connected to second lines (192) of the lines) and switch elements are also separating power source’s connection from the ends.

Switch elements are also connected to control unit (400). Control unit (400) is further configured to control the states of the switch elements through said connection. Control unit (400) is configured to control switch elements in such way that lines (190) are y-connected. Control unit (400) is further configured to control switch elements in such way that lines (190) are delta-connected. In delta-connection first line (191 ), and second line (192) might be serial to each other and third line (193) might be parallel to them.

Switch elements may be semiconductor devices that are adapted to allow current flow and block current flow when a predetermined energy applied thereto, particularly transistors.

In a probable embodiment according to figure 9 first unit (101 ) may comprise the first substrate (1 1 1 ), second substrate (1 12) arranged on first substrate (1 1 1 ) in a shifted manner defining the first junction region (131 ) therebetween, the third substrate (1 13) arranged under the second substrate (1 12) in a shifted manner defining the second junction region (132) therebetween, and the fourth substrate (1 14) arranged on the third substrate (1 13) in a shifted manner defining the first junction region (131 ) therebetween, without contacting to second substrate (1 12). The second unit (102) is similar to first unit (101 ) and, it’s connected to top face (141 ) of fourth substrate (1 14) via one of its substrates (1 10) defining the intermediary junction region (135). Multiple units may be connected successively defining a line (190).

In another probable embodiment according to figure 2 or 3 first unit (101 ) may comprise the first substrate (1 1 1 ), second substrate (1 12) arranged on first substrate (1 1 1 ) in a shifted manner defining the first junction region (131 ) therebetween, the third substrate (1 13) arranged under the second substrate (1 12) in a shifted manner defining the second junction region (132) therebetween, the first dielectric region (151 ) is provided between first unit (101 ) and second unit (102), and the fourth substrate (1 14) arranged under first substrate (1 1 1 ) in a shifted manner defining a third junction region (133), and a fifth substrate (1 15) is arranged under third substrate (1 13) in a shifted manner defining a fourth junction region (134). A second dielectric region (152) is provided between fourth substrate (1 14) and said fifth substrate (1 15). Volume of said second dielectric region (152) is larger than the volume of first dielectric area, i.e., distance between first substrate (1 1 1 ) and second substrate (1 12) is smaller than distance between fourth substrate (1 14) and the fifth substrate (1 15). Thereby first unit (101 ) resembles a stair like appearance having two steps going up (e.g. fouth substrate, first substrate), a top step (e.g. second substrate) and two steps going down (e.g. third substrate, fifth substrate). The second unit (102) is similar to first unit (101 ) and it is connected to side face of fifth substrate (1 15) via one of its substrates (1 10) defining intermediary junction region (135). Multiple units may be connected back to back starting from first unit (101 ) and second unit (102) defining a line (190).

Yet in another probable embodiment according to figure 1 1 first unit (101 ) may be similar to embodiment in figure 10. The second unit (102) of this embodiment is similar to second unit (102) in figure 2. Second unit (102) is connected to bottom face (143) of third substrate (1 13) via one of its substrates (1 10) defining the intermediary junction region (135).

Control unit (400), substrates (1 10), the connections of the measuring means (160), switch elements, diodes may be formed in a single integrated circuit thus decreasing overall resistance of the assembly.

The sensor (10), substrates (1 10) may be produced and connecting measuring means (160) to substrates may be realized using semiconductor device manufacturing methods.

Sensor (10), can also be used for detecting any other electromagnetic radiation. 7,66243E-05 4,23757E-05

Table 1 :

-2,421924E-07 -1.70042E-05

Table 2 REFERENCE NUMBERS

10 Sensor

100 Sensing unit

101 First unit

102 Second unit

1 10 Substrate

1 1 1 First substrate

1 12 Second substrate

113 Third substrate

1 14 Fourth substrate

1 15 Fifth substrate

130 Junction region

131 First junction region

132 Second junction region

133 Third junction region

134 Fourth junction region

135 Intermediary junction region

141 Top face

142 Side faces

143 Bottom face

150 Dielectric region

151 First dielectric region

152 Second dielectric region

160 Measuring means

161 First measuring means

162 Second measuring means

163 Third measuring means

164 Fifth measuring means Hj Junction height

Wj Junction width

Lj Junction length

FI Substrate height

W Substrate width

L Substrate length

181 First terminal

182 Second terminal 183 Third terminal

190 Line

191 First line

192 Second line

193 Third line

200 Optical filter

300 Base plate

310 Dielectric plate

400 Control unit

401 First switch element

402 Second switch element

403 Third switch element

404 Fourth switch element

405 Fifth switch element 406 Sixth switch element

41 1 First diode

412 Second diode