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Title:
SHIELDING COMPOUND, THIN FILM FORMING METHOD USING SAME, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURED THEREFROM
Document Type and Number:
WIPO Patent Application WO/2023/177091
Kind Code:
A1
Abstract:
The present invention relates to a shielding compound, a thin film forming method using same, and a semiconductor substrate and a semiconductor device manufactured therefrom, wherein a compound with a predetermined structure is provided as a shielding agent to form, on a substrate, a uniformly thick deposition layer as a shielding region, due to a difference in adsorption distribution of the corresponding shielding agent, thereby reducing the deposition rate of the thin film and appropriately lowering the thin film growth rate, so that even when a thin film is formed on a substrate with a complicated structure, the step coverage and the thin film thickness uniformity can be greatly improved and impurities can be reduced.

Inventors:
LEE SEUNG HYUN (KR)
JUNG JAE SUN (KR)
YEON CHANG BONG (KR)
TAN KOK CHEW (KR)
CHO DEOK HYUN (KR)
NAM JI HYUN (KR)
Application Number:
PCT/KR2023/001950
Publication Date:
September 21, 2023
Filing Date:
February 10, 2023
Export Citation:
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Assignee:
SOULBRAIN CO LTD (KR)
International Classes:
C23C16/455; C23C16/04; C23C16/34; C23C16/40; H01L21/768
Foreign References:
CN110092969A2019-08-06
KR20100134730A2010-12-23
KR20140008026A2014-01-21
CN110092968A2019-08-06
KR20040030507A2004-04-09
Attorney, Agent or Firm:
NEWKOREA PATENT & LAW FIRM (KR)
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