Title:
SHUNT RESISTOR
Document Type and Number:
WIPO Patent Application WO/2021/230126
Kind Code:
A1
Abstract:
The present invention increases the strength of a shunt resistor and reduces the electric resistance between a resistive body and a terminal in the shunt resistor. The shunt resistor comprises a first terminal and a second terminal which are made of an electrically conductive metal material, and a resistive body disposed between the first terminal and the second terminal. The first terminal and the second terminal each have a through-hole formed therein, and the resistive body is received in the through-holes of the first terminal and the second terminal in the depth direction thereof. In a connected region between the resistive body and the first terminal and the second terminal, an alloy-formed portion is formed along an internal peripheral surface of the through-holes.
Inventors:
KURIHARA TOSHIKAZU (JP)
ENDO TAMOTSU (JP)
ENDO TAMOTSU (JP)
Application Number:
PCT/JP2021/017351
Publication Date:
November 18, 2021
Filing Date:
May 06, 2021
Export Citation:
Assignee:
KOA CORP (JP)
International Classes:
H01C1/01; G01R15/00; H01C1/144; H01C1/148; H01C13/00
Foreign References:
| JP2018132422A | 2018-08-23 | |||
| JP2017212297A | 2017-11-30 | |||
| JP2020013857A | 2020-01-23 | |||
| JP2019201170A | 2019-11-21 |
Attorney, Agent or Firm:
HIRAKI & ASSOCIATES (JP)
Download PDF:
Previous Patent: CIRCUIT STRUCTURE
Next Patent: CLEANING LIQUID AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE
Next Patent: CLEANING LIQUID AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE