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Title:
SIC POLYCRYSTAL MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/045291
Kind Code:
A1
Abstract:
An SiC polycrystal manufacturing method that uses a sublimation and recrystallization method using SiC seed crystals. The SiC polycrystal manufacturing method: uses SiC seed crystals that are SiC polycrystals created using the sublimation and recrystallization method; and uses a polycrystal substrate that includes more α-SiC than β-SiC.

Inventors:
ITOU SEIICHIROU (JP)
ISHIZAKI YUICHIRO (JP)
UMEKI HARUKI (JP)
Application Number:
PCT/JP2021/031503
Publication Date:
March 03, 2022
Filing Date:
August 27, 2021
Export Citation:
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Assignee:
KYOCERA CORP (JP)
International Classes:
C30B29/36; C30B23/02
Domestic Patent References:
WO2017175799A12017-10-12
Foreign References:
JP2005220017A2005-08-18
JP2005311261A2005-11-04
JP2008538542A2008-10-30
JP2009073734A2009-04-09
JP2016508948W
Attorney, Agent or Firm:
ARAFUNE, Hiroshi et al. (JP)
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