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Title:
SILICON-BASED BASE, BASE SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND OPTOELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/088509
Kind Code:
A1
Abstract:
A silicon-based base (10), a base substrate and a manufacturing method therefor, and an optoelectronic device, relating to the field of electronic technology applications. The base substrate comprises: a silicon-based base (10), one surface of the silicon-based base (10) having periodic protrusion structures (101), the side surface and the bottom surface of each protrusion structure (101) having an inclination angle; and a III-V material layer (20) provided on the side of the silicon-based base (10) having the protrusion structures (101). In the base substrate (10), as one surface of the silicon-based base (10) is no longer a silicon (100) crystal plane, but has periodic protrusion structures (101), and the protrusion structures (101) can achieve dislocation self-annihilation, the dislocation caused by the lattice mismatch and the antiphase domain is limited to the layer of the silicon-based base (10), so that when the III-V material is epitaxially grown on the silicon-based base (10), the uniform crystal structure can be maintained. The problem of lattice mismatch and antiphase domains between the silicon-based base (10) and the III-V material can be reduced, and the yield of the III-V material on the silicon-based base (10) can be improved. The present invention is used to form a high-quality III-V material on the silicon-based base (10).

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Inventors:
ZHAO ZHUANG (CN)
LIU LEI (CN)
LE NGUYEN BINH (CN)
WANG TING (CN)
ZHANG JIANJUN (CN)
Application Number:
PCT/CN2019/114307
Publication Date:
May 07, 2020
Filing Date:
October 30, 2019
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
INST PHYSICS CAS (CN)
International Classes:
C30B25/02; H01L21/335
Foreign References:
CN102534768A2012-07-04
CN102534768A2012-07-04
CN103117222A2013-05-22
CN103177971A2013-06-26
CN105826169A2016-08-03
US20080230802A12008-09-25
CN201811303611A2018-11-02
Attorney, Agent or Firm:
BEIJING SAN GAO YONG XIN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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