Title:
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/123148
Kind Code:
A1
Abstract:
This silicon carbide epitaxial substrate comprises a silicon carbide substrate and a silicon carbide epitaxial film. The silicon carbide epitaxial film is present on the silicon carbide substrate. The polytype of the silicon carbide substrate and the silicon carbide epitaxial film is 4H. The silicon carbide epitaxial film comprises a first layer that is in contact with the silicon carbide substrate and a second layer that is on the first layer and constitutes the main surface of the silicon carbide epitaxial film. The silicon carbide substrate, the first layer and the second layer contain an n-type impurity. The concentration of the n-type impurity contained in the first layer is lower than the concentration of the n-type impurity contained in the silicon carbide substrate, but is higher than the concentration of the n-type impurity contained in the second layer. The main surface of the silicon carbide substrate has a basal plane dislocation having a first area density. The main surface of the silicon carbide epitaxial film has a basal plane dislocation having a second area density that is lower than the first area density. The value obtained by dividing the second area density by the first area density is 2/10,000 or less.
Inventors:
MIYASE TAKAYA (JP)
HORI TSUTOMU (JP)
WADA KEIJI (JP)
ITOH HIRONORI (JP)
HORI TSUTOMU (JP)
WADA KEIJI (JP)
ITOH HIRONORI (JP)
Application Number:
PCT/JP2017/032220
Publication Date:
July 05, 2018
Filing Date:
September 07, 2017
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/20; C23C16/42; H01L21/205; H01L21/336; H01L29/12; H01L29/78
Domestic Patent References:
| WO2017018533A1 | 2017-02-02 | |||
| WO2017094764A1 | 2017-06-08 | |||
| WO2017047350A1 | 2017-03-23 |
Foreign References:
| JP2016166101A | 2016-09-15 | |||
| JP2015002207A | 2015-01-05 | |||
| US20140054609A1 | 2014-02-27 | |||
| JP2011219299A | 2011-11-04 | |||
| JP2014027028A | 2014-02-06 | |||
| JP2013107788A | 2013-06-06 | |||
| JP2008074661A | 2008-04-03 | |||
| JP2009295728A | 2009-12-17 | |||
| JP2008004888A | 2008-01-10 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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