Title:
SILICON CARBIDE EPITAXIAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/044841
Kind Code:
A1
Abstract:
Provided is a silicon carbide epitaxial substrate comprising: a silicon carbide single crystal substrate, the polytype of which is 4H and which has a principal plane that is inclined toward the <11-20> direction from the {0001} plane by an angle θ; and a silicon carbide epitaxial layer formed on the principal plane and having a thickness of t, wherein the diameter of the silicon carbide single crystal substrate is 150 mm or larger, the angle θ is over 0° but not more than 6°, and a pair formed by a pit of screw dislocation and a diagonal line defect present at a position apart from the pit by t/tanθ is present on the surface of the silicon carbide epitaxial layer, the density of the pair formed by the pit and the diagonal line defect being 2 pairs/cm2 or less.
Inventors:
HORI TSUTOMU (JP)
MIYASE TAKAYA (JP)
HONKE TSUBASA (JP)
YAMAMOTO HIROFUMI (JP)
OKITA KYOKO (JP)
MIYASE TAKAYA (JP)
HONKE TSUBASA (JP)
YAMAMOTO HIROFUMI (JP)
OKITA KYOKO (JP)
Application Number:
PCT/JP2018/031786
Publication Date:
March 07, 2019
Filing Date:
August 28, 2018
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; C30B25/20; H01L21/20; H01L21/205
Domestic Patent References:
| WO2016051485A1 | 2016-04-07 | |||
| WO2013150587A1 | 2013-10-10 | |||
| WO2015137439A1 | 2015-09-17 | |||
| WO2011074453A1 | 2011-06-23 |
Foreign References:
| JP2017145150A | 2017-08-24 | |||
| JP2015013761A | 2015-01-22 |
Other References:
TSUCHIDA, H. ET AL.: "Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth", JOURNAL OF CRYSTAL GROWTH, vol. 310, 2008, pages 757 - 765, XP022441519, ISSN: 0022-0248
BERECHMAN, R. A. ET AL.: "Trapezoid defect in 4H- SiC epilayers", JOURNAL OF CRYSTAL GROWTH, vol. 338, 2012, pages 16 - 19, XP028350917, ISSN: 0022-0248, DOI: doi:10.1016/j.jcrysgro.2011.10.009
BERECHMAN, R. A. ET AL.: "Trapezoid defect in 4H- SiC epilayers", JOURNAL OF CRYSTAL GROWTH, vol. 338, 2012, pages 16 - 19, XP028350917, ISSN: 0022-0248, DOI: doi:10.1016/j.jcrysgro.2011.10.009
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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