Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME
Document Type and Number:
WIPO Patent Application WO/2015/019732
Kind Code:
A1
Abstract:
A silicon carbide semiconductor device (1) is provided with a silicon carbide substrate (10) and a gate electrode (27). The silicon carbide substrate (10) includes a first source region (14a), a second source region (14b), a first body region (13a), a second body region (13b), a first drift region (17a), a second drift region (17b), a third drift region (17c), and a first connection region (22a). The first connection region (22a) is of a second conductivity type and is disposed so that, when a point of intersection between a line along a first linear section (L1) and a line along a second linear section (L2) is treated as a first point of intersection (13a1), and a point of intersection between a line along a third linear section (L3) and a line along a fourth linear section (L4) is treated as a second point of intersection (13b1), the first point of intersection (13a1) and the second point of intersection (13b1) are included therein. This allows for the provision of a silicon carbide semiconductor device, as well as a manufacturing method for the same, for which switching characteristics can be improved.
Inventors:
HIYOSHI TORU (JP)
WADA KEIJI (JP)
WADA KEIJI (JP)
Application Number:
PCT/JP2014/066820
Publication Date:
February 12, 2015
Filing Date:
June 25, 2014
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/78; H01L29/12
Domestic Patent References:
| WO2011135995A1 | 2011-11-03 | |||
| WO2013027463A1 | 2013-02-28 |
Foreign References:
| JP2009099714A | 2009-05-07 | |||
| JP2011129547A | 2011-06-30 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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