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Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/019731
Kind Code:
A1
Abstract:
A silicon carbide semiconductor device provided with a silicon carbide layer (101) comprising a first main surface (P1) and a second main surface (P2), wherein the silicon carbide layer (101) contains: a first layer (81) of a first conductivity type, forming the first main surface (P1); a second layer (82) of a second conductivity type different from the first conductivity type, disposed within the first layer (81); and a third layer (83) of the first conductivity type, disposed within at least the second layer (82) and forming a portion of the second main surface (P2). On the second main surface (P2) of the silicon carbide layer (101), trenches (TR) are disposed, and the trenches (TR) comprise a first sidewall portion (SW1) which exposes the second layer (82) and the third layer (83), and a bottom portion (BT) which continues from the first sidewall portion (SW1) and is positioned within the second layer (82), said trenches additionally being provided with: a gate insulator film (91) covering each of the first sidewall portion (SW1) and the bottom portion (BT); and gate electrodes (92) disposed upon the gate insulator film (91).

Inventors:
MASUDA TAKEYOSHI (JP)
HIYOSHI TORU (JP)
Application Number:
PCT/JP2014/066818
Publication Date:
February 12, 2015
Filing Date:
June 25, 2014
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/12
Foreign References:
JP2008141056A2008-06-19
JP2013143523A2013-07-22
JPH11354788A1999-12-24
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
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