SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

WIPO Patent Application WO/2013/187019

A1

This method for producing a SiC semiconductor device involves: forming a p-type layer (31) inside a trench (6) by epitaxial growth; and then forming a p-type SiC layer (7) by leaving the p-type layer (31) only on the bottom section and both front end sections of the trench (6) by hydrogen etching. That is, portions of the p-type layer (31) that have been formed on the side surfaces of the trench (6) are removed. In this way, the p-type SiC layer (7) can be formed without relying on oblique ion implantation. Because there is no need to perform oblique ion implantation separately, it is possible to inhibit the complication of production steps, such as moving an ion implantation device, and to reduce production costs. Further, because there is no damage due to defects caused by ion implantation, it is possible to inhibit drain leakage and to reliably prevent the p-type SiC layer (7) from remaining on the side surfaces of the trench (6). Thus, it is possible to produce a SiC semiconductor device that can achieve both high voltage resistance and high switching speed.

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CHIDA KAZUMI (JP)
TAKEUCHI YUICHI (JP)
SOEJIMA NARUMASA (JP)
WATANABE YUKIHIKO (JP)

PCT/JP2013/003547

December 19, 2013

June 06, 2013

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DENSO CORP (JP)
TOYOTA MOTOR CO LTD (JP)
CHIDA KAZUMI (JP)

H01L21/336; H01L29/06; H01L29/12; H01L29/78

JPH1098188A	1998-04-14
JP2007242852A	2007-09-20
JP2003031802A	2003-01-31
JP2006032420A	2006-02-02
JP2009081412A	2009-04-16
JP2005142243A	2005-06-02
JPH1098188A	1998-04-14
JP2007242852A	2007-09-20

See also references of EP 2863417A4

KIN, Junhi (JP)
Gold Junki (JP)

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