SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2019/044921

A1

This silicon carbide semiconductor device is provided with: a first current dispersion layer (13), which is formed between an n- type layer (12) and a base region (18), and which is formed of a first conductivity-type silicon carbide having an impurity concentration that is higher than that of the n- type layer (12); a plurality of first deep layers (14), which are formed in the first current dispersion layer (13) such that the first deep layers are shallower than the first current dispersion layer (13), said first deep layers being formed of a second conductivity-type silicon carbide extending in one direction; a second current dispersion layer (15), which is formed between the first current dispersion layer (13) and the base region (18), and in which a bottom section of a trench (21) is positioned, said second current dispersion layer being formed of a first conductivity-type silicon carbide; and a second deep layer 17, which is formed between the first current dispersion layer (13) and the base region (18), and which is connected to the base region (18) and the first deep layers (14), said second deep layer being formed of a second conductivity-type silicon carbide that is formed by being separated from the trench (21).

MITANI SHUHEI (JP)
KAJI AIKO (JP)
EBIHARA YASUHIRO (JP)
NAGAOKA TATSUJI (JP)
AOI SACHIKO (JP)

PCT/JP2018/032004

March 07, 2019

August 29, 2018

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DENSO CORP (JP)
TOYOTA MOTOR CO LTD (JP)

H01L29/78; H01L29/06; H01L29/12

WO2014199465A1

2014-12-18

JP2015192027A	2015-11-02
US20140021484A1	2014-01-23
JP2008227356A	2008-09-25

YOU-I PATENT FIRM (JP)

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