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Title:
SILICON-CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON-CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/044922
Kind Code:
A1
Abstract:
A first conductive source region (8) is configured such that a portion thereof on a second conductive base region (6) side has a lower impurity concentration than a portion thereof on the side of the surface which is brought into ohmic contact with a source electrode (15). For example, the source region (8) is configured such that a first source region (8a) has a relatively low concentration and a second source region (8b) has a higher concentration than the first source region. Thus, a saturation current value during load short-circuiting can be reduced, and the short-circuit capacity of this SiC semiconductor device can be increased.

Inventors:
KAJI AIKO (JP)
TAKEUCHI YUICHI (JP)
MITANI SHUHEI (JP)
SUZUKI RYOTA (JP)
YAMASHITA YUSUKE (JP)
Application Number:
PCT/JP2018/032005
Publication Date:
March 07, 2019
Filing Date:
August 29, 2018
Export Citation:
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Assignee:
DENSO CORP (JP)
TOYOTA MOTOR CO LTD (JP)
International Classes:
H01L29/78; H01L21/205; H01L21/336; H01L29/12
Foreign References:
JP2010021175A2010-01-28
US9123800B22015-09-01
JP2011044688A2011-03-03
JP2014239146A2014-12-18
JP2007134469A2007-05-31
JP2015056486A2015-03-23
JP2005328013A2005-11-24
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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