Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2023/047878
Kind Code:
A1
Abstract:
The present invention improves the performance of a silicon carbide semiconductor device comprising a vertical SiC power MISFET having a trench formed in an upper surface of a SiC epitaxial substrate. As a corresponding means, a silicon carbide semiconductor device is formed which comprises: a trench formed in an upper surface of a semiconductor layer and having a first lateral surface and a second lateral surface opposing each other in a first direction along an upper surface of the semiconductor layer; a gate electrode formed on the inside of the trench with an insulating film therebetween; a body layer adjoining the first lateral surface; a current spread region adjoining each of the first lateral surface and the second lateral surface; and a guard region covering corners of a bottom surface of the trench on the first lateral surface side and spaced apart from corners of the bottom surface of the trench on the second lateral surface side. In a first direction, the film thickness of the insulating film covering the second lateral surface is greater than the film thickness of the insulating film covering the first lateral surface. Specifically, the current spread region is spaced apart from a lateral surface in a second direction transverse to the first direction in plan view, and the guard region covers all of the four corners of the bottom surface of the trench.
Inventors:
SUEMATSU TOMOKA (JP)
SUTO TAKERU (JP)
SUTO TAKERU (JP)
Application Number:
PCT/JP2022/031942
Publication Date:
March 30, 2023
Filing Date:
August 24, 2022
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/12
Domestic Patent References:
| WO2014178262A1 | 2014-11-06 |
Foreign References:
| JP2019096711A | 2019-06-20 | |||
| JP2018195782A | 2018-12-06 | |||
| JP2019106425A | 2019-06-27 | |||
| JP2018037621A | 2018-03-08 |
Attorney, Agent or Firm:
TSUTSUI & ASSOCIATES (JP)
Download PDF: