SILICON CARBIDE SEMICONDUCTOR DEVICE - SUMITOMO ELECTRIC INDUSTRIES

Title:

SILICON CARBIDE SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2014/097760

Kind Code:

A1

Abstract:

A silicon carbide semiconductor device (1) has a silicon carbide substrate (10), a gate insulating film (15) and a gate electrode (27). The silicon carbide substrate (10) comprises a first impurity region (17) that has a first conductivity type, a well region (13) that is in contact with the first impurity region (17) and has a second conductivity type that is different from the first conductivity type, and a second impurity region (14) that is separated from the first impurity region (17) by means of the well region (13) and has the first conductivity type. The gate insulating film (15) is in contact with the first impurity region (17) and the well region (13). The gate electrode (27) is in contact with the gate insulating film (15) and is arranged opposite to the well region (13) with respect to the gate insulating film (15). The characteristic on-resistance at a voltage that is half the gate drive voltage applied to the gate electrode (27) is lower than twice the characteristic on-resistance at the gate drive voltage. Consequently, there can be provided a silicon carbide semiconductor device (1) which has improved switching characteristics.

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Inventors:

HIYOSHI TORU (JP)
MASUDA TAKEYOSHI (JP)
WADA KEIJI (JP)
TSUNO TAKASHI (JP)

Application Number:

PCT/JP2013/079992

Publication Date:

June 26, 2014

Filing Date:

November 06, 2013

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES (JP)

International Classes:

H01L29/12; H01L21/336; H01L29/78

Domestic Patent References:

WO2011108768A1

2011-09-09

Foreign References:

JP2000200791A

2000-07-18

Other References:

BRETT A. HULL ET AL.: "Performance of 60A, 1200V 4H-SiC DMOSFETs", MATERIALS SCIENCE FORUM, vol. 615-617, 2009, pages 749 - 752

Attorney, Agent or Firm:

Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)

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