Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/138743
Kind Code:
A1
Abstract:
In the present invention, an impurity region (18) is formed between adjacent first trenches (210), in a portion other than that between an end surface (210a) of one first trench (210) and a portion of the other first trench (210) facing the end surface (210a). Between the adjacent first trenches (210), second-conductivity-type regions (17, 19) are arranged between the end surface (210a) of the one first trench (210) and the portion of the other first trench (210) facing the end surface (210a).
Inventors:
YAMAMOTO TSUYOSHI (JP)
Application Number:
PCT/JP2021/047649
Publication Date:
June 30, 2022
Filing Date:
December 22, 2021
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/12
Domestic Patent References:
| WO2019069416A1 | 2019-04-11 | |||
| WO2015182233A1 | 2015-12-03 |
Foreign References:
| JP2020088158A | 2020-06-04 | |||
| JP2019176013A | 2019-10-10 | |||
| JP2016096307A | 2016-05-26 | |||
| JP2021034621A | 2021-03-01 | |||
| JP2021086910A | 2021-06-03 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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