SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

Title:

SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

Document Type and Number:

WIPO Patent Application WO/2019/244834

Kind Code:

A1

Abstract:

A heavy metal element is added to a SiC single crystal (6) during the growing of the SiC single crystal (6) so that the addition density of the heavy metal element can become 1 × 1015 cm-3 or more. The SiC single crystal (6) having this constitution hardly undergoes dislocation by the action of a thermal stress generated during the growth thereof. Therefore, when the SiC single crystal (6) is sliced to produce a wafer and a SiC layer is epitaxially grown on the wafer, dislocation rarely occurs. Due to this constitution, a SiC single crystal which is prevented from the occurrence of dislocation or multiplication can be produced.

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Inventors:

TOKUDA YUICHIRO (JP)
UEHIGASHI HIDEYUKI (JP)
HOSHINO NORIHIRO (JP)
TSUCHIDA HIDEKAZU (JP)
KAMATA ISAHO (JP)

Application Number:

PCT/JP2019/023877

Publication Date:

December 26, 2019

Filing Date:

June 17, 2019

Export Citation:

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Assignee:

DENSO CORP (JP)
CENTRAL RES INST ELECTRIC POWER IND (JP)

International Classes:

C30B29/36; C30B25/02

Domestic Patent References:

WO2012029952A1

2012-03-08

Foreign References:

JP2002234800A	2002-08-23
JP2012250864A	2012-12-20
JP2006124247A	2006-05-18

Attorney, Agent or Firm:

YOU-I PATENT FIRM (JP)

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