Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SILICON CARBIDE SUBSTRATE, SILICON-CARBIDE EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SILICON CARBIDE SUBSTRATE, AND METHOD FOR PRODUCING SILICON-CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/218809
Kind Code:
A1
Abstract:
This silicon carbide substrate has a main surface. The silicon carbide substrate contains a plurality of carbon inclusions. The main surface has a plurality of pits formed therein. The plurality of carbon inclusions each have a maximum length of 2-50 μm along a direction perpendicular to the main surface, and the plurality of pits each have an area of 3,000 μm2 or larger. The ratio of the area density of the plurality of pits to the area density of the plurality of carbon inclusions is 0.008 or less.

More Like This:
WO/2023/201934APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL ON BASIS OF PVT METHOD
WO/2022/160547REACTION CHAMBER OF SILICON CARBIDE EPITAXIAL FURNACE
JP6500828Method for manufacturing SiC single crystal
Inventors:
SHIIHARA TAKAHIRO (JP)
HONKE TSUBASA (JP)
OKITA KYOKO (JP)
Application Number:
PCT/JP2023/014085
Publication Date:
November 16, 2023
Filing Date:
April 05, 2023
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; B24B37/00; B24B37/08; H01L21/304
Domestic Patent References:
WO2013088928A12013-06-20
WO2020235205A12020-11-26
WO2013035539A12013-03-14
Foreign References:
JP2018039714A2018-03-15
JP2020011878A2020-01-23
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: PHARMACEUTICAL PRODUCTION ASSISTANCE DEVICE, METHOD OF OPERATING PHARMACEUTICAL PRODUCTION ASSISTANC...

Next Patent: COMPOSITE MATERIAL, METHOD FOR PRODUCING COMPOSITE MATERIAL, AND TERMINAL