Title:
SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2021/111817
Kind Code:
A1
Abstract:
This silicon carbide substrate has a first main surface and a second main surface opposite the first main surface. The silicon carbide substrate includes screw dislocations and pits each having a maximum diameter of 1 μm to 10 μm in a direction parallel to the first main surface. When the screw dislocations and the pits are observed in the first main surface, the ratio of the number of the pits divided by the number of the screw dislocations is 1% or less. In the first main surface, the concentration of magnesium is less than 1×1011 atoms/cm2.
Inventors:
OKITA KYOKO (JP)
HONKE TSUBASA (JP)
UETA SHUNSAKU (JP)
HONKE TSUBASA (JP)
UETA SHUNSAKU (JP)
Application Number:
PCT/JP2020/041822
Publication Date:
June 10, 2021
Filing Date:
November 10, 2020
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; H01L21/304
Domestic Patent References:
| WO2014196394A1 | 2014-12-11 | |||
| WO2017057742A1 | 2017-04-06 |
Foreign References:
| JP2017145150A | 2017-08-24 | |||
| JP2015129086A | 2015-07-16 | |||
| JP2003510840A | 2003-03-18 | |||
| JP2015073098A | 2015-04-16 | |||
| JP2016210680A | 2016-12-15 | |||
| JP2016174162A | 2016-09-29 |
Other References:
"Brix% (sucrose g / 100g) vs. refractive index", ATAGO, XP055834826, Retrieved from the Internet [retrieved on 20210106]
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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