Title:
SILICON CARBIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/167337
Kind Code:
A1
Abstract:
This silicon carbide substrate includes a first major plane and a second major plane opposite the first major plane, and is composed of a polytype 4H silicon carbide. The first major plane has a maximum diameter of 140 mm or more. The first major plane is a {0001} plane or a plane inclined relative to the {0001} plane at an off angle of greater than 0° and 8° or less. In the first major plane, the average value of the full width at half maximum of a peak that corresponds to a return mode of a vertical optical branch of a Raman spectrum of the silicon carbide substrate is less than 2.5 cm-1, and the standard deviation of the full width at half maximum is 0.06 cm-1 or less.
Inventors:
OKITA KYOKO (JP)
HONKE TSUBASA (JP)
HONKE TSUBASA (JP)
Application Number:
PCT/JP2018/040073
Publication Date:
September 06, 2019
Filing Date:
October 29, 2018
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36
Domestic Patent References:
| WO2017064897A1 | 2017-04-20 |
Foreign References:
| JP2017105697A | 2017-06-15 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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