Title:
SILICON NITRIDE POWDER
Document Type and Number:
WIPO Patent Application WO/2023/120422
Kind Code:
A1
Abstract:
The present invention relates to a silicon nitride powder characterized by having a β conversion rate of at least 80% and a crystal strain of at least 1.0×10-3. According to the present invention, it is possible to provide a silicon nitride powder having high sintering properties even at a low temperature of about 1,800 °C.
Inventors:
KAWAI HIDEAKI (JP)
ISHIMOTO RYUJI (JP)
ISHIMOTO RYUJI (JP)
Application Number:
PCT/JP2022/046411
Publication Date:
June 29, 2023
Filing Date:
December 16, 2022
Export Citation:
Assignee:
TOKUYAMA CORP (JP)
International Classes:
C01B21/068
Domestic Patent References:
| WO2022004755A1 | 2022-01-06 | |||
| WO2022034810A1 | 2022-02-17 |
Foreign References:
| JP2020023406A | 2020-02-13 | |||
| JPH0648838A | 1994-02-22 | |||
| JP2021113138A | 2021-08-05 |
Attorney, Agent or Firm:
TAGUCHI, Masahiro et al. (JP)
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