Title:
SILICON NITRIDE SINTERED BODY, WEAR-RESISTANT MEMBER, AND METHOD FOR PRODUCING SILICON NITRIDE SINTERED BODY
Document Type and Number:
WIPO Patent Application WO/2022/210539
Kind Code:
A1
Abstract:
This silicon nitride sintered body according to an embodiment is characterized by: including silicon nitride crystal particles and a grain boundary phase; and showing seven or more peaks detected in the range from 400 cm-1 to 1200 cm-1 when a 20 μm × 20 μm region in an arbitrary cross section of the silicon nitride sintered body is analyzed using Raman spectroscopy, where the strongest peak of the seven of more peaks is not found in the range from 515 cm-1 to 525 cm-1. Also, at least three of the seven or more peaks are preferably in the range from 530 cm-1 to 830 cm-1. At least one of the seven or more peaks is preferably in the range from 440 cm-1 to 460 cm-1.
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Inventors:
SANO SHOYA (JP)
AOKI KATSUYUKI (JP)
FUNAKI KAI (JP)
OOKUBO KAZUYA (JP)
AOKI KATSUYUKI (JP)
FUNAKI KAI (JP)
OOKUBO KAZUYA (JP)
Application Number:
PCT/JP2022/015017
Publication Date:
October 06, 2022
Filing Date:
March 28, 2022
Export Citation:
Assignee:
TOSHIBA KK (JP)
TOSHIBA MATERIALS CO LTD (JP)
TOSHIBA MATERIALS CO LTD (JP)
International Classes:
C04B35/587; C04B35/645; F16C19/06; F16C33/32; G01N21/65
Domestic Patent References:
| WO2011102298A1 | 2011-08-25 | |||
| WO2020121752A1 | 2020-06-18 | |||
| WO2018194052A1 | 2018-10-25 | |||
| WO2008032427A1 | 2008-03-20 | |||
| WO2014104112A1 | 2014-07-03 |
Foreign References:
| JPH02124771A | 1990-05-14 | |||
| JP2012121802A | 2012-06-28 | |||
| JP2001328869A | 2001-11-27 | |||
| JP2003065337A | 2003-03-05 |
Attorney, Agent or Firm:
HYUGAJI, Masahiko et al. (JP)
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