SILICON NITRIDE SUBSTRATE PRODUCTION METHOD AND SILICON NITRIDE SUBSTRATE

WIPO Patent Application WO/2020/090832

A1

This silicon nitride substrate production method comprises laminating a plurality of green sheets containing a silicon nitride powder and a sintering aid with a separation material interposed therebetween, sintering the laminate then separating the laminate into a plurality of silicon nitride sintered bodies, and forming silicon nitride substrates from the silicon nitride sintered bodies, and is characterized in that the separation material contains the silicon nitride powder. Since no boron nitride power is present on the surfaces of the silicon nitride substrates obtained, the silicon nitride substrates exhibit excellent heat cycle properties when bonded to copper. The separation material has a specific surface area measured by a BET method of 1 m2/g to 20 m2/g, a 50% particle size D50 measured by a laser diffraction/scattering method of 20 µm or less on a volume basis, and an oxygen amount of 0.3 wt% or more and less than 2 wt%. By applying the separation material in an amount of 0.1 mg/cm2 to 3 mg/cm2 to the surfaces of green sheets, silicon nitride substrates having a thermal conductivity at room temperature of 80 W/(m·K) or more and a 4-point-bending strength at room temperature of 800 MPa or more can be produced.

HONDA MICHIO (JP)
FUJINAGA MASATAKA (JP)
OHMARU TAKUJI (JP)
SHIBATA KOJI (JP)
YAMADA TETSUO (JP)

PCT/JP2019/042413

May 07, 2020

October 29, 2019

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UBE INDUSTRIES (JP)

C04B35/593; C04B35/64; H05K1/03

WO2013146789A1

2013-10-03

JP2011216577A	2011-10-27
JP2002513374A	2002-05-08
JP2000193241A	2000-07-14
JP2013012591A	2013-01-17

AOKI, Atsushi et al. (JP)

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