Title:
SILICON SHEET PRODUCING APPARATUS AND SOLAR CELL COMPRISING SILICON SHEET PRODUCED BY THE SAME
Document Type and Number:
WIPO Patent Application WO/2002/020882
Kind Code:
A1
Abstract:
A silicon sheet producing apparatus comprising a crucible (14) containing fused silicon and a rotating cooling body (11) rotatably disposed above the crucible (14) and having at least one flat surface (1) for growing a solid silicon sheet (12) on the surface is characterized by comprising a separating/transfer out mechanism for separating a silicon sheet (12) formed on the flat surface (1) of the rotating cooling body (11) by dipping it in a fused silicon (13) by the rotation and then lifting it up from the fused silicon (13) and transferring the separated silicon sheet (12) by the inertia force by the rotation of the rotating cooling body (11) and/or the fall by the gravity out of the apparatus before the silicon sheet (12)is dipped again in the fused silicon (13). With this, a planar silicon sheet free of internal stress can be produced and the silicon sheet can be taken out continuously and stably.
Inventors:
GOMA SHUJI (JP)
IGARASHI KAZUTO (JP)
YANO KOHZABUROH (JP)
TANIGUCHI HIROSHI (JP)
IGARASHI KAZUTO (JP)
YANO KOHZABUROH (JP)
TANIGUCHI HIROSHI (JP)
Application Number:
PCT/JP2001/007001
Publication Date:
March 14, 2002
Filing Date:
August 13, 2001
Export Citation:
Assignee:
SHARP KK (JP)
GOMA SHUJI (JP)
IGARASHI KAZUTO (JP)
YANO KOHZABUROH (JP)
TANIGUCHI HIROSHI (JP)
GOMA SHUJI (JP)
IGARASHI KAZUTO (JP)
YANO KOHZABUROH (JP)
TANIGUCHI HIROSHI (JP)
International Classes:
C30B29/06; C30B15/00; C30B29/64; H01L21/208; H01L31/04; H01L31/18; (IPC1-7): C30B29/06; H01L31/04
Other References:
TANIGUCHI H. ET AL.: "Crystal growth of silicon sheet for solar cell", NIPPON KESSHOU SEICHOU GAKKAISHI, vol. 27, no. 4, October 2000 (2000-10-01), pages 156 - 161
Attorney, Agent or Firm:
Nogawa, Shintaro (Nishitenma 5-chome Kita-ku Osaka-shi, Osaka, JP)
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