SILICON SINGLE CRYSTAL INGOT EVALUATION METHOD, SILICON EPITAXIAL WAFER EVALUATION METHOD, SILICON EPITAXIAL WAFER MANUFACTURING METHOD, AND SILICON MIRROR SURFACE WAFER EVALUATION METHOD

Title:

SILICON SINGLE CRYSTAL INGOT EVALUATION METHOD, SILICON EPITAXIAL WAFER EVALUATION METHOD, SILICON EPITAXIAL WAFER MANUFACTURING METHOD, AND SILICON MIRROR SURFACE WAFER EVALUATION METHOD

Document Type and Number:

WIPO Patent Application WO/2022/244304

Kind Code:

A1

Abstract:

Provided is a silicon single crystal ingot evaluation method comprising: cutting out a plurality of (three or more) silicon wafers from a silicon single crystal ingot to be evaluated; processing the plurality of silicon wafers into silicon mirror surface wafers by subjecting the silicon wafers to mirror surface processing; processing the plurality of silicon mirror surface wafers into silicon epitaxial wafers by forming an epitaxial layer on the surface that was subjected to mirror surface processing; acquiring a bright spot map for the epitaxial layer surface of each of the plurality of silicon epitaxial wafers by means of a laser surface inspection device; and producing a layered map by layering the bright spot maps obtained for the epitaxial layer surfaces of the plurality of silicon epitaxial wafers. If a bright spot group in which a plurality of (three or more) bright spots are distributed in a line is not confirmed in the layered map, it is presumed that the region from which the plurality of silicon wafers were cut out from the silicon single crystal ingot to be evaluated is not a twin crystal generation region. If the bright spot group distributed in a line is confirmed in the layered map, it is presumed that the region is a twin crystal generation region, said region being the region from which the plurality of silicon wafers were cut out and in which the bright spots included in the bright spot group were confirmed in the silicon single crystal ingot to be evaluated.

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Inventors:

FURUKAWA JUN (JP)
SUZUKI KAZUYA (JP)
MORI KEIICHIRO (JP)
NAGASAWA TAKAHIRO (JP)

Application Number:

PCT/JP2022/001939

Publication Date:

November 24, 2022

Filing Date:

January 20, 2022

Export Citation:

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Assignee:

SUMCO CORP (JP)

International Classes:

C30B29/06; C30B25/20; H01L21/66

Foreign References:

JP2017105653A

2017-06-15

Attorney, Agent or Firm:

SIKS & CO. (JP)

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