SINGLE CRYSTAL PULLING DEVICE AND SINGLE CRYSTAL PULLING METHOD

WIPO Patent Application WO/2022/163091

A1

The present invention is a single crystal pulling device comprising a pulling furnace that has a central axis and a magnetic field generator that has coils and is provided around the pulling furnace, the single crystal pulling device applying a horizontal magnetic field to a molten semiconductor raw material and suppressing convection within a crucible, wherein: the single crystal pulling device is provided with a main coil and a sub coil; two sets of coil pairs arranged facing each other are provided as the main coil; two coil axes thereof are included in the same horizontal plane; a central angle α between the two coil axes sandwiching an X axis, which is the direction of the magnetic-field line of force in the central axis in the horizontal plane, is 100-120 degrees; one pair of superconducting coils arranged facing each other are provided as the sub coil; the coil axis of one coil thereof and the X axis coincide; and the current values of the main coil and sub coil can be set independently. There are thereby provided a single crystal pulling device and a single crystal pulling method with which it is possible to produce a single crystal having a low oxygen concentration and to grow a defect-free zone single crystal having a normal oxygen concentration at high speed using the same device.

KAMADA HIROYUKI (JP)
TAKANO KIYOTAKA (JP)

PCT/JP2021/042776

August 04, 2022

November 22, 2021

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SHINETSU HANDOTAI KK (JP)

C30B15/20; C30B29/06; C30B30/04

JP2007184383A	2007-07-19
JP2017210387A	2017-11-30
JP2015124127A	2015-07-06
JP2003313087A	2003-11-06

YOSHIMIYA Mikio et al. (JP)

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