Title:
SMALL SCALE WIRES WITH MICROELECTROMECHANICAL DEVICES
Document Type and Number:
WIPO Patent Application WO2004028952
Kind Code:
A3
Abstract:
A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.
Inventors:
SUBRAMANIAN KANAKASABAPATHI
MACDONALD NOEL C
MACDONALD NOEL C
Application Number:
PCT/US2003/020057
Publication Date:
September 16, 2004
Filing Date:
June 26, 2003
Export Citation:
Assignee:
CORNELL RES FOUNDATION INC (US)
International Classes:
B81C1/00; H01L21/20; (IPC1-7): B81C1/00
Other References:
DOHERTY L ET AL: "Application of MEMS technologies to nanodevices", PROCEEDINGS OF THE 2003 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (CAT. NO.03CH37430), ISCAS 2003, BANGKOK, THAILAND, 25-28 MAY 2003, PISCATAWAY, NJ, USA, IEEE, USA, PAGE(S) III - 934-7 VOL.3, ISBN: 0-7803-7761-3, XP001180729
MILANOVIC V ET AL: "Micromachining technology for lateral field emission devices", IEEE TRANSACTIONS ON ELECTRON DEVICES, JAN. 2001, IEEE, USA, vol. 48, no. 1, pages 166 - 173, XP002276011, ISSN: 0018-9383
NAMATSU H ET AL: "Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (MICROELECTRONICS AND NANOMETER STRUCTURES), SEPT. 1997, AIP FOR AMERICAN VACUUM SOC, USA, vol. 15, no. 5, pages 1688 - 1696, XP002276012, ISSN: 0734-211X
BOURLAND S ET AL: "Silicon-on-insulator processes for the fabrication of novel nanostructures", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (MICROELECTRONICS AND NANOMETER STRUCTURES), SEPT. 2001, AIP FOR AMERICAN VACUUM SOC, USA, vol. 19, no. 5, pages 1995 - 1997, XP002276013, ISSN: 0734-211X
MILANOVIC V ET AL: "Micromachining technology for lateral field emission devices", IEEE TRANSACTIONS ON ELECTRON DEVICES, JAN. 2001, IEEE, USA, vol. 48, no. 1, pages 166 - 173, XP002276011, ISSN: 0018-9383
NAMATSU H ET AL: "Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (MICROELECTRONICS AND NANOMETER STRUCTURES), SEPT. 1997, AIP FOR AMERICAN VACUUM SOC, USA, vol. 15, no. 5, pages 1688 - 1696, XP002276012, ISSN: 0734-211X
BOURLAND S ET AL: "Silicon-on-insulator processes for the fabrication of novel nanostructures", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (MICROELECTRONICS AND NANOMETER STRUCTURES), SEPT. 2001, AIP FOR AMERICAN VACUUM SOC, USA, vol. 19, no. 5, pages 1995 - 1997, XP002276013, ISSN: 0734-211X
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