Title:
SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/098696
Kind Code:
A1
Abstract:
This technology pertains to: a solid-state imaging element capable of stably performing overflow from a PD, and preventing the occurrence of Qs decline and color mixing; and an electronic device. A solid-state imaging element according to one embodiment of this technology is equipped, on the light-receiving surface side inside a semiconductor substrate, with a charge-maintaining part for producing and maintaining a charge according to incident light, an OFD section from which the charge saturated by the charge-maintaining part is discharged, and a potential barrier for forming a barrier for the charge flowing from the charge-maintaining part to the OFD section. Therein, the OFD section comprises a low-concentration OFD section and a high-concentration OFD section which have different concentrations of the same type of impurity, and the high-concentration OFD section and the potential barrier are formed with an interval interposed therebetween. This technology is applicable to CMOS image sensors, for example.
Inventors:
WATANABE TAIICHIRO (JP)
NAKAMURA RYOSUKE (JP)
SATO YUSUKE (JP)
KOGA FUMIHIKO (JP)
NAKAMURA RYOSUKE (JP)
SATO YUSUKE (JP)
KOGA FUMIHIKO (JP)
Application Number:
PCT/JP2015/084783
Publication Date:
June 23, 2016
Filing Date:
December 11, 2015
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L27/146; H04N5/359; H04N5/369
Domestic Patent References:
WO2011043432A1 | 2011-04-14 |
Foreign References:
JPH06303528A | 1994-10-28 | |||
JPS62230273A | 1987-10-08 | |||
JP2013038118A | 2013-02-21 | |||
US5235196A | 1993-08-10 | |||
JP2014127519A | 2014-07-07 | |||
JP2007096271A | 2007-04-12 | |||
JP2014225560A | 2014-12-04 | |||
JP2013172202A | 2013-09-02 | |||
US20150237276A1 | 2015-08-20 |
Attorney, Agent or Firm:
NISHIKAWA Takashi et al. (JP)
Nishikawa 孝 (JP)
Nishikawa 孝 (JP)
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