Title:
SPUTTER DEPOSITION DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/004619
Kind Code:
A1
Abstract:
The present invention can suppress the occurrence of an uneroded region at the outer periphery of a sputtering target during film deposition by magnetron sputtering. The present invention is a sputtering deposition device for depositing a film onto a single object for film formation in a vacuum by using a magnetron sputtering method. The present invention has: a magnet device 10 for generating a magnetron beam, which is disposed on the opposite side from a sputtering surface 7a of a single sputtering target 7 and which moves in a direction along the sputtering surface 7a of the sputtering target 7 at the time of discharge; an inner shield section 21 which is disposed around and in close proximity to the outer periphery of the sputtering target 7 and has a floating potential; and an outer shield section 22 which is disposed around the inner shield section 21, has a ground potential, and is made of an electroconductive material.
More Like This:
Inventors:
SAKAUE HIROTOSHI (JP)
OONO TETSUHIRO (JP)
OONO TETSUHIRO (JP)
Application Number:
PCT/JP2019/025800
Publication Date:
January 02, 2020
Filing Date:
June 28, 2019
Export Citation:
Assignee:
ULVAC INC (JP)
International Classes:
C23C14/35; C23C14/34
Domestic Patent References:
| WO2008149891A1 | 2008-12-11 |
Foreign References:
| JP2010283360A | 2010-12-16 | |||
| JP2001247956A | 2001-09-14 | |||
| JPH1072665A | 1998-03-17 |
Attorney, Agent or Firm:
ABE Hideki et al. (JP)
Download PDF: