Title:
SPUTTERING TARGET AND METHOD FOR PREPARATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2001/034869
Kind Code:
A1
Abstract:
A sputtering target comprising an indium-zinc based oxide (IZO sputtering target), characterized as having a structure of two phases, one being an indium-rich phase comprising indium oxide crystals and Zn dissolved or not dissolved therein, and the other being a zinc-rich phase comprising zinc oxide crystals and In dissolved or not dissolved therein. The sputtering target exhibits some improved properties while maintaining excellent characteristics inherent to an IZO transparent conductive film comprising an indium-zinc based oxide as a main component. The increase of density, the minimization and/or homogenization of crystal grains and the enhancement of deflection strength, with respect to the above target, lead to the stabilization of the discharge during sputtering and to the production of a transparent conductive film with stability and with good reproducibility.
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Inventors:
ISHIZUKA KEIICHI
Application Number:
PCT/JP2000/005172
Publication Date:
May 17, 2001
Filing Date:
August 02, 2000
Export Citation:
Assignee:
NIKKO MATERIALS CO LTD (JP)
International Classes:
C04B35/453; C23C14/34; H01B1/08; (IPC1-7): C23C14/34
Domestic Patent References:
| WO1997001853A1 | 1997-01-16 |
Foreign References:
| JPH11302835A | 1999-11-02 | |||
| US5417816A | 1995-05-23 | |||
| JPH11302074A | 1999-11-02 | |||
| JPH05214523A | 1993-08-24 | |||
| JPH10298743A | 1998-11-10 |
Attorney, Agent or Firm:
Ogoshi, Isamu (Nishi-Shimbashi 3-chome Minato-ku Tokyo, JP)
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