Title:
SPUTTERING TARGET, METHOD FOR PRODUCING SPUTTERING TARGET, AND OPTICAL FUNCTIONAL FILM
Document Type and Number:
WIPO Patent Application WO/2022/097635
Kind Code:
A1
Abstract:
The sputtering target according to the present invention is characterized by: having a carbide phase including carbides of one or more elements selected from Ti and Nb, an oxide phase including oxides of one or more elements selected from Ti, Mo, Ta, and W; having an area percentage of 5% or less for a metal phase; and having a density ratio of 90% or more. A structure is obtained by dispersing the carbide phase in a matrix formed of the oxide phase. The average particle size of the carbide phase is preferably within a range of 1-100 μm.
Inventors:
KANEKO DAISUKE (JP)
UMEMOTO KEITA (JP)
SUGIUCHI YUKIYA (JP)
OKANO SHIN (JP)
OHTOMO TAKESHI (JP)
UMEMOTO KEITA (JP)
SUGIUCHI YUKIYA (JP)
OKANO SHIN (JP)
OHTOMO TAKESHI (JP)
Application Number:
PCT/JP2021/040380
Publication Date:
May 12, 2022
Filing Date:
November 02, 2021
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C23C14/34; C04B35/495; C04B35/56; C23C14/06
Domestic Patent References:
| WO2010026853A1 | 2010-03-11 |
Foreign References:
| JP2003321771A | 2003-11-14 | |||
| JP2013016724A | 2013-01-24 | |||
| JP2005068507A | 2005-03-17 | |||
| JP2005327428A | 2005-11-24 |
Attorney, Agent or Firm:
MATSUNUMA Yasushi et al. (JP)
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