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Title:
SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2023/008559
Kind Code:
A1
Abstract:
Provided are a sputtering target and method for producing the same, whereby the generation of arcing is curbed and product yield is improved.　This sputtering target is characterized in that, when observed by a laser microscope at 400x magnification, at least a non-sputtered region has a surface shape where (a) the minimum autocorrelation length Sal is 3 to 30 μm.

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Inventors:
NAGASHIMA TAKUYA (JP)
YAGI SHOUHEI (JP)
KAMADA TOMONARI (JP)
TADOKORO JUN (JP)
AONO MASAHIRO (JP)
EGUCHI TOYOKAZU (JP)
Application Number:
PCT/JP2022/029295
Publication Date:
February 02, 2023
Filing Date:
July 29, 2022
Export Citation:
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Assignee:
TANAKA PRECIOUS METAL IND (JP)
International Classes:
C23C14/34
Foreign References:
JPS63282265A1988-11-18
JPH09209133A1997-08-12
JP2005113267A2005-04-28
JP5727740B22015-06-03
Attorney, Agent or Firm:
YAMAMOTO, Osamu et al. (JP)
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