Title:
STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/144653
Kind Code:
A1
Abstract:
Provided is a novel storage device. Provided is a storage device in which N layers (N is an integer of 2 or more) of a storage layer are stacked, the storage layer including a plurality of memory cells disposed in a matrix shape. A bit line and a selection line are disposed along a stacking direction of the storage layers, and a write word line and a read word line are disposed in a direction orthogonal to the stacking direction of the storage layers. The memory cells have a first transistor, a second transistor, and a capacitative element. Either the source or the drain of the first transistor is electrically connected to the bit line via a first conductor having a region that functions as either a source electrode or a drain electrode. At least one of an upper surface, a lateral surface, and a lower surface of the first conductor has a region that is in contact with the bit line.
Inventors:
YAMAZAKI SHUNPEI (JP)
ONUKI TATSUYA (JP)
KATO KIYOSHI (JP)
KUNITAKE HITOSHI (JP)
HODO RYOTA (JP)
ONUKI TATSUYA (JP)
KATO KIYOSHI (JP)
KUNITAKE HITOSHI (JP)
HODO RYOTA (JP)
Application Number:
PCT/IB2023/050354
Publication Date:
August 03, 2023
Filing Date:
January 16, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB (JP)
International Classes:
H10B12/00; H01L21/336; H01L29/788; H01L29/792; H10B41/70
Domestic Patent References:
| WO2020157553A1 | 2020-08-06 |
Foreign References:
| JP2015181159A | 2015-10-15 | |||
| JP2013065638A | 2013-04-11 |
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